Quality GaN 50W 100W Anti Drone RF Amplifier Module Multi Band Solid State 10MHz-6GHz High Power factory

GaN 50W 100W Anti Drone RF Amplifier Module Multi Band Solid State 10MHz-6GHz High Power

Basic Properties

Place of Origin: China Mainland

Brand Name: Roviyno

Model Number: RAH

Trading Properties

Minimum Order Quantity: 100

Price: $65/pc--$165/pc

Payment Terms: T/T

Supply Ability: <500 pcs 10 working days

GaN 50W 100W Anti-Drone Multi-Band Solid-State 10MHz-6GHz High-Power RF Amplifier Module Solid-state RF power amplifier modules employing LDMOS and GaN devices in Class A and Class A/B topologies. Engineered for narrowband and broadband operation across AM, FM, VHF, and UHF bands, delivering output ...

Product Details

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10MHz-6GHz GaN Amplifier Module

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Solid State RF Amplifier Module

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100W Anti Drone RF Amplifier Module

Frequency Range: Customized

Working Voltage: 28V

Output Power (Max): ≥47 DBm

LED Indicator: Yes

Dimension: 130*58*18 Mm

Working Temperature: -20～+65℃

Gain: 47±1 DB

Ripple In Band: ≤ 3 DB

Temperature Protection: 75℃

Input Signal Source: Built-in High-speed Noise Modulation Signal Source

Product Description

GaN 50W 100W Anti-Drone Multi-Band Solid-State 10MHz-6GHz High-Power RF Amplifier Module

Solid-state RF power amplifier modules employing LDMOS and GaN devices in Class A and Class A/B topologies. Engineered for narrowband and broadband operation across AM, FM, VHF, and UHF bands, delivering output power from 0 dBm to over 50 dBm. Custom modules available upon request. We offers RF Power Amplifier Modules built on robust GaN technology with advanced multi-die integration and compact form factors having 50 Ohms input and output interface. Engineered for wideband, DPD-friendly operation, they deliver high gain and efficiency with robust thermal performance.

Product Highlights

Broad Frequency Capability: 100 MHz – 7.2 GHz coverage ensures comprehensive drone signal jamming
Custom Frequency Options: Working frequency (e.g. 5725–5850 MHz) fully customizable to customer specifications
Optimized Adjustability: Bandwidth and GaN operating voltage can be fine-tuned for maximum efficiency
Complete ODM & OEM Solutions: From concept design and prototyping to production adjustments
Rapid Delivery Cycle: Standard shipment in 3–10 working days after deposit receipt
Convenient Payment Options: T/T, Western Union, PayPal, and Credit Card supported
Reliable Global Shipping: DHL, UPS, TNT, FedEx express or economical sea freight available worldwide

Why GaN Transistors?

The key characteristics that makes Gallium Nitride an enabling technology is its significantly higher power density and greater reliability. GaN's increased power density (W/mm) has enabled Empower to reduce power amplifier sizes, minimize cooling and heat-sink demands and package more power per given volume. With the increased efficiencies that GaN provides, Empower RF delivers more reliable, smaller and lighter broadband power amplifiers.
GaN -more specifically GaN on SiC -provides higher output power, longer pulse widths, and larger duty cycles and significantly higher MTTF than GaN on Si, GaAS HEMT, LDMOS, and MOSFET high power transistors.
Higher Breakdown voltages 60 to 80 VBRDSS (100-150 Volts)
Higher Power Density
Superior Thermal Conductivity
Example: LDMOS - 12W/sq. mm dissipation vs. GaN - 70W/sq. mm dissipation
Higher Junction Temperatures > 200°C (+225°C to 250°C)
Higher Saturated Electron Drift Velocity (higher current delivering capability)
Lower Intrinsic Capacitance which provides higher input/output device impedances allowing broadband matching
GaN provides High Gain and Efficiencies (Narrow band 50% to 60%)
Superior Noise & Linear Power Added Efficiency (PAE)

GaN -more specifically GaN on SiC -provides higher output power, longer pulse widths, and larger duty cycles and significantly higher MTTF than GaN on Si, GaAS HEMT, LDMOS, and MOSFET high power transistors.

GaN 50W 100W Anti Drone RF Amplifier Module Multi Band Solid State 10MHz-6GHz High Power

50W Module Technical Datasheet

RF DATA

Item		Spec.	Remarks
Working Voltage		28V	24-28V
Working current		≤ 4.2A	Output 50W
Analog sweeping speed		120 KHz/ 8μ/s	Customize
Output Power (Max)		47±1 dBm	50W
Gain		47±1 dB
Ripple in Band		≤ 3 dB	Peak
Bandwidth adjustment		Yes	By screw
Center adjustment		Yes	By screw
VSWR Protection		Internal circulattor	Customize
Temperature Protection		75℃	Customize
No-load Protection		Yes	Customize
Enable control		Customize	3-28V
Input Signal Source		Built-in high-speed noise modulation signal source
Output VSWR		≤2
High Low Temperature test	Temperature	-20～+65℃	Working properly
	Gain Stability	±2 dB	At -20℃～+65℃
	Power stability	±2 dB	At -20℃～+65℃
Power supply Port		Positive and negative	(Optional: Enable control wire)
Shell Material		Aluminum	With polish processing
RF output connector		SMA-K
Dimension		1123716 mm	Or Customize
Screw Size		M2.5
Weight		230g	Customize

Frequencies Optional

No.	Frequency Range	Output Power	PA Technology	Isolator	Dimensions (mm)
50W VCO RF Power Amplifier Module
1	20–100 MHz	50W	SiMOS	No	117×58×16
2	100–200 MHz	50W	SiMOS	No	117×40×18 / 117×58×16
3	200–300 MHz	50W	SiMOS	No	117×40×18 / 117×58×16
4	300–400 MHz	50W	GaN	No	117×40×18 / 117×58×16
5	300–400 MHz	50W	LDMOS	Yes	130×58×18
6	300–400 MHz	50W	GaN	Yes	130×58×18
7	400–500 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
8	500–600 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
9	600–700 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
10	700–840 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
11	840–1020 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
12	1000–1300 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
13	1300–1500 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
14	1550–1650 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
15	1700–1900 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
16	1900–2100 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
17	2400–2500 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
18	2575–2690 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
19	3100–3800 MHz	50W	GaN	Yes	117×40×18 / 117×58×16
20	3800–4800 MHz	50W	GaN	Yes	117×58×16
21	4800–5000 MHz	50W	GaN	Yes	117×58×16
22	5100–5300 MHz	50W	GaN	Yes	117×58×16
23	5300–5700 MHz	50W	GaN	Yes	117×58×16
24	5700–5850 MHz	50W	GaN	Yes	117×58×16
25	5900–6200 MHz	50W	GaN	Yes	117×58×16